Tagore Technology
Tagore Technology was founded in May 2011 to pioneer Gallium Nitride on Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and Power Management applications. Our advanced proprietary technologies and devices significantly reduce the complexity, size, weight and power consumption of system solutions at aggressive price points - significantly improving the power conversion performance factor compared to silicon solutions. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is committed to developing disruptive solutions using wide bandgap technology to help our customers solve RF and power design challenges and accelerate time to market for a wide range of applications from <>G cellular infrastructure to consumer, automotive, defense and security. We work with leading semiconductor foundries and assembly houses to deliver products with premium quality and proven high reliability.