Avalanche Technology Inc.
Avalanche Technology Inc., headquartered in Fremont, California, is a leader in next-generation Spin-Torque Magnetic RAM (STT-MRAM) technology and is recognized as a frontrunner to replace traditional Flash, SRAM and DRAM, providing unified architecture support for aerospace and defense, industrial, storage and other high-reliability applications. Backed by more than 300 granted patents for cell, circuit and system design innovations leveraging MRAM, this revolutionary non-volatile memory uses a novel perpendicular magnetic tunnel junction (pMTJ) cell structure manufactured using a 300mm standard CMOS process. Discrete and embedded products currently in production are designed with standard serial and parallel interfaces and offer unprecedented density, durability, reliability and low power consumption along with the persistence and inherent immunity of MRAM technology, making Avalanche truly the "Next Generation MRAM Company."